Copyright © Philip M. Parker, INSEAD. Terms of Use.

N-CHANNEL ENHANCEMENT MOST

Specialty Definition: N-CHANNEL ENHANCEMENT MOST

DomainDefinition

Electrical Engineering

An n-channel field-effect transistor in which n-type source and drain regions are separated by the enhanced p-type surface of the substrate when the gate is unbiased, conduction between these two regions commencing when a positive threshold voltage is applied to the gate terminal. Source: European Union. (references)

Source: compiled by the editor from various references; see credits.

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Modern Translation: N-CHANNEL ENHANCEMENT MOST

Language Translations for "N-CHANNEL ENHANCEMENT MOST"; alternative meanings/domain in parentheses.

Finnish

  

n-kanavainen avausmosfetti (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

French

  

transistor MOS effet de champ canal n par effet d'enrichissement (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

German

  

N-Kanal-Anreicherungs-MOS-Feldeffekttransistor (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

Greek 

  

κρυσταλλοτρίοδος MOS Επιδράσεως εδίου πυκνώσεως διαύλου τύπου n (enhancement n-MOST, n-channel enhancement MOS field-effect transistor), τρανζίστορ MOS Επιδράσεως εδίου πυκνώσεως διαύλου τύπου n (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

Italian

  

transistore MOS a effetto di campo a canale n a incremento (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

Portuguese

  

transistor MOS de efeito de campo com enriquecimento do canal-n (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

Spanish

  

transistor de efecto de campo MOS tipo incremento canal n (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

   

Swedish

  

N-kanals MOS-transistor av anrikningstyp (enhancement n-MOST, n-channel enhancement MOS field-effect transistor). (various references)

Source: compiled by the editor from various translation references.

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Alternative Orthography: N-CHANNEL ENHANCEMENT MOST


Hexadecimal (or equivalents, 770AD-1900s) (references)

4E 2D 43 48 41 4E 4E 45 4C      45 4E 48 41 4E 43 45 4D 45 4E 54      4D 4F 53 54

Leonardo da Vinci (1452-1519; backwards) (references)

        

Binary Code (1918-1938, probably earlier) (references)

01001110 00101101 01000011 01001000 01000001 01001110 01001110 01000101 01001100 00100000 01000101 01001110 01001000 01000001 01001110 01000011 01000101 01001101 01000101 01001110 01010100 00100000 01001101 01001111 01010011 01010100

HTML Code (1990) (references)

&#78 &#45 &#67 &#72 &#65 &#78 &#78 &#69 &#76 &#32 &#69 &#78 &#72 &#65 &#78 &#67 &#69 &#77 &#69 &#78 &#84 &#32 &#77 &#79 &#83 &#84

ISO 10646 (1991-1993) (references)

004E 002D 0043 0048 0041 004E 004E 0045 004C      0045 004E 0048 0041 004E 0043 0045 004D 0045 004E 0054      004D 004F 0053 0054

Encryption (beginner's substitution cypher): (references)

48153742354848394623948423548373947394854247495354

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INDEX

1. Translations: Modern
2. Orthography
3. Bibliography


  

Copyright © Philip M. Parker, INSEAD. Terms of Use.