Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Domain | Definition |
Electrical Engineering | A P-channel field-effect transistor in which the p-type source and drain regions are separated by the enhanced n-type surface of the substrate when the gate is unbiased, conduction between these two regions commencing when a negative threshold voltage is applied to the gate terminal. Source: European Union. (references) |
Source: compiled by the editor from various references; see credits. | |
| Language | Translations for "ENHANCEMENT P-MOST"; alternative meanings/domain in parentheses. | ||||||||||||||||||||||
Danish | p-kanal enhancement MOS felt-effekt transistor. (various references) | ||||||||||||||||||||||
Dutch | p-kanaal-enhancement-MOS-veldeffecttransistor. (various references) | ||||||||||||||||||||||
Finnish | P-kanavainen avausmosfetti (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
French | transistor MOS effet de champ canal p par zone d'enrichissement (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
German | P-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Greek | κρυσταλλοτρίοδος MOS επιδράσεως πεδίου πυκνώσεως διαύλου τύπου p (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST), τρανζίστορ MOS Επιδράσεως πεδίου πυκνώσεως διαύλου τύπου p (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Italian | transistore MOS a effetto di campo a canale p a incremento (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Pig Latin | enhancementay transistor MOS de efeito de campo com intensificaçao do canal p (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) transistor de efecto de campo MOS por zona de enriquecimiento canal p (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) P-kanal MOS-fälteffekttransistor av anrikningstyp (p-channel enhancement MOS field-effect transistor, p-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Scrabble® Enable2K-Verified Anagrams | |
| Words within the letters "a-c-e-e-e-h-m-m-n-n-n-o-p-s-t-t" | |
-4 letters: enchantments, enhancements. | |
-5 letters: cantonments, commentates, encampments, enchantment, enhancement. | |
| Source: compiled by the editor from various references; see credits. SCRABBLE® is a registered trademark. All intellectual property rights in and to the game are owned in the U.S.A and Canada by Hasbro Inc., and throughout the rest of the world by J.W. Spear & Sons Limited of Maidenhead, Berkshire, England, a subsidiary of Mattel Inc. Mattel and Spear are not affiliated with Hasbro. | |
Hexadecimal (or equivalents, 770AD-1900s) (references)45 4E 48 41 4E 43 45 4D 45 4E 54 50 2D 4D 4F 53 54 |
| Leonardo da Vinci (1452-1519; backwards) (references)
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Binary Code (1918-1938, probably earlier) (references)01000101 01001110 01001000 01000001 01001110 01000011 01000101 01001101 01000101 01001110 01010100 00100000 01010000 00101101 01001101 01001111 01010011 01010100 |
HTML Code (1990) (references)E N H A N C E M E N T   P - M O S T |
ISO 10646 (1991-1993) (references)0045 004E 0048 0041 004E 0043 0045 004D 0045 004E 0054 0050 002D 004D 004F 0053 0054 |
Encryption (beginner's substitution cypher): (references)39484235483739473948542501547495354 |
| 1. Translations: Modern 2. Anagrams 3. Orthography 4. Bibliography |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
