Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Domain | Definition |
Electrical Engineering | An n-channel field-effect transistor in which n-type source and drain regions are separated by the enhanced p-type surface of the substrate when the gate is unbiased, conduction between these two regions commencing when a positive threshold voltage is applied to the gate terminal. Source: European Union. (references) |
Source: compiled by the editor from various references; see credits. | |
| Language | Translations for "ENHANCEMENT N-MOST"; alternative meanings/domain in parentheses. | ||||||||||||||||||||||
Danish | n-kanal enhancement MOS felteffekt transistor. (various references) | ||||||||||||||||||||||
Dutch | n-kanaalenhancement-MOS-veldeffecttransistor. (various references) | ||||||||||||||||||||||
Finnish | n-kanavainen avausmosfetti (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
French | transistor MOS effet de champ canal n par effet d'enrichissement (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
German | N-Kanal-Anreicherungs-MOS-Feldeffekttransistor (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Greek | κρυσταλλοτρίοδος MOS Επιδράσεως εδίου πυκνώσεως διαύλου τύπου n (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST), τρανζίστορ MOS Επιδράσεως εδίου πυκνώσεως διαύλου τύπου n (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Italian | transistore MOS a effetto di campo a canale n a incremento (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Pig Latin | enhancementay transistor MOS de efeito de campo com enriquecimento do canal-n (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) transistor de efecto de campo MOS tipo incremento canal n (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) N-kanals MOS-transistor av anrikningstyp (n-channel enhancement MOS field-effect transistor, n-channel enhancement MOST). (various references) | ||||||||||||||||||||||
Scrabble® Enable2K-Verified Anagrams | |
| Words within the letters "a-c-e-e-e-h-m-m-n-n-n-n-o-s-t-t" | |
-4 letters: enchantments, enhancements. | |
-5 letters: cantonments, commentates, enchantment, enhancement, nonsentence. | |
| Source: compiled by the editor from various references; see credits. SCRABBLE® is a registered trademark. All intellectual property rights in and to the game are owned in the U.S.A and Canada by Hasbro Inc., and throughout the rest of the world by J.W. Spear & Sons Limited of Maidenhead, Berkshire, England, a subsidiary of Mattel Inc. Mattel and Spear are not affiliated with Hasbro. | |
Hexadecimal (or equivalents, 770AD-1900s) (references)45 4E 48 41 4E 43 45 4D 45 4E 54 4E 2D 4D 4F 53 54 |
| Leonardo da Vinci (1452-1519; backwards) (references)
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Binary Code (1918-1938, probably earlier) (references)01000101 01001110 01001000 01000001 01001110 01000011 01000101 01001101 01000101 01001110 01010100 00100000 01001110 00101101 01001101 01001111 01010011 01010100 |
HTML Code (1990) (references)E N H A N C E M E N T   N - M O S T |
ISO 10646 (1991-1993) (references)0045 004E 0048 0041 004E 0043 0045 004D 0045 004E 0054 004E 002D 004D 004F 0053 0054 |
Encryption (beginner's substitution cypher): (references)39484235483739473948542481547495354 |
| 1. Translations: Modern 2. Anagrams 3. Orthography 4. Bibliography |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
