Copyright © Philip M. Parker, INSEAD. Terms of Use.

| Domain | Definition |
Electrical Engineering | A type of laser in which a layer of GaAs, for example, is sandwiched between two layers of the ternary compound AlGaAs which has a wider energy gap than GaAs and also a lower refractive index. Both N-n-P and N-p-P structures show the same behaviour, where N and P represent the wider bandgap semiconductor according to carrier type. Source: European Union. (references) |
Source: compiled by the editor from various references; see credits. | |
| Language | Translations for "DOUBLE HETEROSTRUCTURE LASER"; alternative meanings/domain in parentheses. | ||||||||||||||||
Danish | dobbelt heterostruktur-laser (DH laser). (various references) | ||||||||||||||||
Finnish | kaksoisheterolaser (DH laser). (various references) | ||||||||||||||||
French | laser à injection à double hétérostructure. (various references) | ||||||||||||||||
German | Doppelhetero-Dioden-Laser (DH laser). (various references) | ||||||||||||||||
Pig Latin | oubleday eterostructurehay aserlay laser de dupla heterostrutura (DH laser). (various references) laser med dubbel heterostruktur (DH laser). (various references) | ||||||||||||||||
Copyright © Philip M. Parker, INSEAD. Terms of Use.