Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 1997 | Invention patented by Brett E. Huff and Farhad Moghadam on July 9th, 1997. Abstract: A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
