Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 2000 | Invention patented by Arne W. Ballantine, John J. Ellis-Monaghan, Toshiharu Furukawa, Glenn R. Miller, and James A. Slinkman on March 29th, 2000. Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
