Cu damascene interconnections using barrier/capping layer

Year	Description
2001	Invention patented by Lu You, Fei Wang, and Richard J. Huang on February 14th, 2001. Abstract: Interconnects to an underlying Cu feature are formed with improved reliability by replacing a portion of the capping layer in the bottom of an opening in an overlying dielectric layer, e.g., an ILD, with a barrier material, such as Ta or TaN. During Ar sputter etching to round the ILD corners, the exposed barrier layer portion is removed and redeposited to form a liner on the side surfaces of the dielectric layer defining the opening, thereby avoiding Cu redeposition on, and/or penetration through, the side surfaces of the dielectric layer.
Source: selected by the editor from original sources.

Invention: Cu damascene interconnections using barrier/capping layer