Ceiling arrangement for an epitaxial growth reactor

Year	Description
1997	Invention patented by Albert A. Jr. Burk and Linard M. Thomas on January 27th, 1997. Abstract: A ceiling arrangement for a high temperature epitaxial growth reactor in which silicon carbide epitaxial layers may be grown. The ceiling includes an upper layer of carbon foam and a lower layer of graphite bonded thereto. A support structure for the ceiling is coupled to a nozzle assembly, holding a gas delivering nozzle. The support structure has a lower flange portion which includes an upwardly extending projection defining a knife edge upon which the ceiling rests. The arrangement minimizes unwanted heat transfer from the ceiling to the nozzle assembly and nozzle.
Source: selected by the editor from original sources.

Invention: Ceiling arrangement for an epitaxial growth reactor