Copyright © Philip M. Parker, INSEAD. Terms of Use.

| Year | Description |
| 1998 | Invention patented by Donald Rene Wall, John Joseph Garant, Kevin Michael Prettyman, and Srinivasa S. Reddy on March 29th, 1998. Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.