CVD method of producing and doping fullerenes

Year	Description
1994	Invention patented by Lee Chow on January 2nd, 1994. Abstract: Methods of producing fullerenes in large-macroscopic quantities inexpensively is disclosed without using solid carbon material such as graphite. In a preferred embodiment, fullerenes are formed by a hot filament CVD procedure. The fullerenes occur in the soot that forms as a by-product on the edges of the substrate holder. Mass spectrum of soot deposits shows lines corresponding to C.sub.60. From the typical concentrations of gaseous species in the diamond-growing CVD chamber, hydrocarbon species including CH.sub.3 or C.sub.2 H.sub.2 can be the precursors for the formation of fullerenes in the CVD chamber. A method of using fullerenes to enhance the properties of rubber composites is also described.
Source: selected by the editor from original sources.

Invention: CVD method of producing and doping fullerenes