CVD method of depositing copper films by using improved organocopper precursor blend

Invention: CVD method of depositing copper films by using improved organocopper precursor blend

Year	Description
1999	Invention patented by Ling Chen, Seshadri Ganguli, Bo Zheng, Samuel Wilson, and Christophe Marcadal on June 24th, 1999. Abstract: Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.
Source: selected by the editor from original sources.