Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 1997 | Invention patented by Brian A. Vaartstra and Brenda D. Wanner on August 20th, 1997. Abstract: A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
