CVD method for forming metal boride films using metal borane cluster compounds

  

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CVD method for forming metal boride films using metal borane cluster compounds

Invention: CVD method for forming metal boride films using metal borane cluster compounds

Year    Description
1991Invention patented by James T. Spencer on July 28th, 1991. Abstract: Metal or metal boride films are deposited by CVD using a metal borane cluster compound as a precursor. For a nickel film, NiCl.sub.2 is vaporized in a reactor tube in the presence of B.sub.10 H.sub.14 or another polyborane. For an aluminum film, Al(BH.sub.4).sub.3 is formed by reacting AlCl.sub.3 with NaBH.sub.4, and using the Al(BH.sub.4).sub.3 as a precursor borane cluster compound. The substrate is heated to a selected temperature so that the deposited film has a controlled stoichiometry of metal and boron.
Source: selected by the editor from original sources.

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