CVD method and apparatus therefor

Year	Description
1994	Invention patented by Akimasa Yuuki, Takaaki Kawahara, Kouitirou Tsutahara, and Touru Yamaguchi on February 23th, 1994. Abstract: A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.
Source: selected by the editor from original sources.

Invention: CVD method and apparatus therefor