CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed

Invention: CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed

Year	Description
1998	Invention patented by Masami Mizukami, Takashi Mochizuki, and Yumiko Kawano on July 8th, 1998. Abstract: A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.
Source: selected by the editor from original sources.