Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 1993 | Invention patented by Mitsutoshi Miyasaka on March 15th, 1993. Abstract: A semiconductor film and a thin-film semiconductor device are produced by a simple low-pressure process. To improve the quality, when they are produced during the low-pressure process, a semiconductor film forming a channel portion is deposited by a low-pressure CVD apparatus whose effective pumping speed inside a reaction chamber is in excess of 10 SCCM/mtorr or which reduces the pressure inside the reaction chamber below 10.sup.-5 torr within 10 minutes after a vacuum-pumping machine is started to be operated steadily. This improves the semiconductor characteristics, the productivity, and can lower the process temperature. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
