CVD apparatus and method of using same

Year	Description
1999	Invention patented by Hiroshi Nogami on February 22th, 1999. Abstract: To suppress the formation of dust particles, prevent the implantation of ions into a substrate and to achieve a good plasma distribution in the vicinity of the substrate when depositing a silicon oxide film using TEOS, for example, by means of CVD on a substrate which has a large surface area, an apparatus in which plasma is generated in the reactor 12 and active species (radicals) are formed and film deposition is carried out on the substrate 11 with this active species and precursor gas in which a partitioning plate 15 in which a plurality of holes 22 has been formed is established. The reactor is divided into a plasma generating space 16 and a film deposition process space 17, in which the precursor gas is delivered directly into the film deposition process space 17 through a plurality of pathways which is established dispersed over and passing through the plasma generating space and the partitioning plate, and the active species which are formed in the plasma generating space are delivered into the film deposition process space through the plurality of holes which are established in the partitioning plate.
Source: selected by the editor from original sources.

Invention: CVD apparatus and method of using same