Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 1992 | Invention patented by Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, and Naoki Hirose on September 7th, 1992. Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated. |
| 1993 | Invention patented by Kenichi Ono on May 12th, 1993. Abstract: A CVD apparatus for growing a compound semiconductor film with a desired composition ratio on a wafer includes a heat source for supplying heat to a source gas flowing over the wafer so that a temperature gradient of the source gas is cancelled. The heat source may be a susceptor having a hollow part so that the heat capacity of the susceptor varies from the upstream part to the downstream part of the source gas flow. In this structure, the decomposition ratio of the source gas is uniform over the wafer surface whereby the uniformity of the composition distribution in the film grown on the wafer is improved, increasing production yield. |
| 1996 | Invention patented by Shigeru Mizuno, Masahito Ishihara, Manabu Tagami, Hajime Sahase, and Nobuyuki Takahashi on April 17th, 1996. Abstract: A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
