Copyright © Philip M. Parker, INSEAD. Terms of Use.

| Year | Description |
| 1998 | Invention patented by Kenneth E. Knapp and Ronald A. Barr on November 1st, 1998. Abstract: A magnetoresistive device includes a metal layer, formed over a substrate, in which a groove is formed. A magnetoresistive element is formed in the groove, forming two magnetoresistive element portions that are separated by a conductive element. A sense current applied to the metal layer flows through the two magnetoresistive element portions with a predominant current-perpendicular-to-plane component. A method includes techniques that are less complex and less expensive than submicron photolithography to form the above described magnetoresistive device with submicron geometries. A system includes a read/write head that incorporates a magnetoresistive element formed in a groove of a metal layer. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.