CPP GMR device with inverse GMR material

Year	Description
2002	Invention patented by Min Li, Simon Liao, and Kochan Ju on June 10th, 2002. Abstract: Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of AP2. AP2 is the antiparallel layer that contacts the antiferromagnetic layer (AP1 being in contact with the pinned layer). Said modification comprises the addition of chromium or vanadium to AP2. Examples of alloys suitable for use in AP2 include NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2, is replaced by a layer of chromium. The resulting structure exhibits the stability of the synthetic pin unit and the performance of the direct pin unit.
Source: selected by the editor from original sources.

Invention: CPP GMR device with inverse GMR material