CCD having charge-injected potential barrier regions protected from overvoltages

Year	Description
1997	Invention patented by Yasutaka Nakashiba on September 22th, 1997. Abstract: A charge-coupled device comprises a substrate, a charge transfer layer on the substrate, an insulating layer on the charge transfer layer, and a sequence of electrodes divided into recurrent groups of first, second, third and fourth electrodes each, the electrodes being arranged in a single-layered structure on the insulating layer. First, second, third and fourth conductors are connected respectively to the first, second, third and fourth electrodes of each electrode group. The insulating layer permanently holds electrons in positions respectively corresponding to the second and fourth electrodes of each group. First, second, third and fourth breakdown diodes are connected respectively to the first, second, third and fourth conductors, where the first and third breakdown diodes have a first breakdown voltage and the second and fourth diodes have a second breakdown voltage higher than the first breakdown voltage. Fifth and sixth breakdown diodes having the first breakdown voltage are connected to the second and fourth conductors, respectively, after the potential barrier regions are formed.
Source: selected by the editor from original sources.

Invention: CCD having charge-injected potential barrier regions protected from overvoltages