CBiCMOS fabrication method using sacrificial gate poly

Year	Description
1992	Invention patented by Kuan-Yang Liao, Maw-Rong Chin, Pen C. Chou, and Kirk R. Osborne on October 29th, 1992. Abstract: A complementary bipolar CMOS fabrication method uses a common deposition for both the CMOS gate contacts, and as a sacrificial layer for patterning bipolar devices. The deposition is removed from the bipolar devices and, after implanting base and emitter regions, is replaced with a separate emitter contact. Prior to its removal the sacrificial layer is coated with an oxidation resistant layer that imparts a desirable rounded shape to the edge of a thermal oxide layer that is grown around the bipolar emitter area. Common mask and implant steps are also used to fabricate lightly doped CMOS drains together with bipolar base-link regions, and CMOS source/drain regions together with bipolar external base regions. The fabrication technique also facilitates the fabrication of capacitors with no additional steps required, and includes an improved NiCr resistor contact method.
Source: selected by the editor from original sources.

Invention: CBiCMOS fabrication method using sacrificial gate poly