Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 2001 | Invention patented by Douglas D. Coolbaugh and Kathryn T. Schonenberg on June 10th, 2001. Abstract: A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region, the sub-collector region, the extrinsic base regions, and the collector-base junction region. In a preferred embodiment each of the aforesaid regions include C implants. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
