Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 2002 | Invention patented by Ziyun Wang, Chongying Xu, Thomas H. Baum, Michael A. Todd, and Niamh McMahon on August 6th, 2002. Abstract: A volatile solid-source novel antimony precursor, Br.sub.2 SbCH.sub.3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br.sub.2 SbCH.sub.3 crystalline product. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
