Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 1996 | Invention patented by Thomas J. Miller, Michael A. Haase, Paul F. Baude, and Michael D. Pashley on October 6th, 1996. Abstract: A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
