Avalanche stress protected semiconductor device having variable input impedance

Year	Description
1991	Invention patented by Stephen P. Robb, John P. Phipps, and Michael D. Gadberry on January 6th, 1991. Abstract: A power transistor having a control electrode which is coupled to a polysilicon JFET transistor is provided. In particular, a power MOSFET device having a polysilicon gate is formed and a JFET transistor is formed in the same polysilicon layer which forms the gate of the power MOSFET. A drain of the JFET forms an input terminal for the power MOSFET and a source of the JFET is coupled to the gate of the power MOSFET. A gate of the JFET is coupled to a gate-drain diode clamp so that when the gate-drain diode clamp is activated a portion of the current which is used to turn on the power MOSFET is channeled to the gate of the JFET and increases the drain-to-source series resistance of the JFET. The resistance of the JFET is low during normal operation and increases only when the gate-drain clamp is activated thus provides a high resistance during avalanche stress protection and a low resistance during normal operation.
Source: selected by the editor from original sources.

Invention: Avalanche stress protected semiconductor device having variable input impedance