Avalanche photodiode with thin built-in depletion region

Year	Description
1999	Invention patented by Isao Watanabe on July 31th, 1999. Abstract: The present invention relates to an avalanche photodiode having a simple structure, high reliability, and a high speed response on the order of Gbps. This photodiode is formed by depositing laminated layers on a semiconductor substrate in the order of an n-type buffer layer, a semiconductor multiplication layer, a p-type semiconductor field buffer layer, a p-type semiconductor light absorbing layer, a p-type semiconductor cap layer, and a p-type semiconductor contact layer, and said p-type semiconductor light absorbing layer is constructed by two layers consisted of a depleted region of a thickness in the range of 10 nm to 0.3 .mu.m disposed adjacent to the p-type semiconductor field buffer layer and a non-depleted layer region at a thickness of less than 2 .mu.m disposed adjacent to the depleted layer region.
Source: selected by the editor from original sources.

Invention: Avalanche photodiode with thin built-in depletion region