Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area

Invention: Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area

Year	Description
1993	Invention patented by A. Nadeem Ishaque and Robert F. Kwasnick on April 1st, 1993. Abstract: An avalanche photodiode (APD) has a two tier passivation layer disposed over the silicon APD body. The passivation layer includes an inorganic moisture barrier layer and an organic dielectric layer. The inorganic material forming this layer is preferably silicon nitride or silicon oxide, and the organic dielectric material is a polyimide or benzocyclobutene.
Source: selected by the editor from original sources.