Avalanche photodiode having a thin multilayer superlattice structure sandwiched between barrier and well layers to reduce energy loss

Invention: Avalanche photodiode having a thin multilayer superlattice structure sandwiched between barrier and well layers to reduce energy loss

Year	Description
1991	Invention patented by Kikuo Makita on April 17th, 1991. Abstract: An avalanche photodiode includes an avalanche multiplication layer consisting of a superlattice multilayer structure in which a repeated thin multilayer of short-width well layers and short-width barrier layers is sandwiched between a well layer and a barrier layer. The width of the short-width well and barrier layers is preferably up to 100 .ANG.. In such a structure, an ionization rate of electrons in the avalanche multiplication layer increases, so that the avalanche photodiode has low-noise and high speed response performances.
Source: selected by the editor from original sources.