Avalanche photodiode for photon counting applications and method thereof

Year	Description
2002	Invention patented by James S. Vickers on November 12th, 2002. Abstract: An improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/.mu.m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.
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Invention: Avalanche photodiode for photon counting applications and method thereof