Avalanche photodiode for high-speed applications

Year	Description
2000	Invention patented by Mark A. Itzler, Chen Show Wang, Nicholos J. Codd, and Suzanne McCoy on August 6th, 2000. Abstract: A method for designing an avalanche photodiode for high bit rate or high speed applications is disclosed. The photodiode is made up of a multiplication layer of a first semiconductor material, an absorption layer of a second semiconductor material and a field control layer of a third semiconductor material having. The field control layer has a moderate doping of a first type dopant and is intermediate between the multiplication and absorption layers. A central region of the multiplication layer is diffused with a second type dopant which results in a diffused region having a greater thickness in the center than in the periphery of the diffused region.
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Invention: Avalanche photodiode for high-speed applications