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| Year | Description |
| 2001 | Invention patented by Gyung Ock Kim, In Kyu Kim, and Kwang Eui Pyun on August 12th, 2001. Abstract: There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.