Avalanche photodetector

  

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Avalanche photodetector

Invention: Avalanche photodetector

Year    Description
2001Invention patented by Gyung Ock Kim, In Kyu Kim, and Kwang Eui Pyun on August 12th, 2001. Abstract: There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer.
Source: selected by the editor from original sources.

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