Avalanche photo diode

  

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Avalanche photo diode

Invention: Avalanche photo diode

Year    Description
1991Invention patented by Yuichi Matsushima, Kazuo Sakai, and Shigeyuki Akiba on May 16th, 1991. Abstract: An avalanche photo diode in which the guard ring portion and the front of the pn junction of the light receiving portion are formed at the same depth from the surface of an InP layer, so that the guard ring performs its desired function.
Source: selected by the editor from original sources.

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