Avalanche diode in a bipolar integrated circuit

Year	Description
1992	Invention patented by Jean-Michel Moreau on June 25th, 1992. Abstract: An avalanche diode is formed in an N layer (20) of a bipolar integrated circuit. The diode comprises a first (P) region (22) and N region (21) disposed inside the first region. The portion of the first region which resides under the N region and close to the interface with the latter has a first doping level. A second (P) region (23) extends under the N region with a second doping level higher than the first close to the junction. A third P region (30) is disposed under the N region and overlaps the second P region. The third region has, at its interface with the N region, a doping level intermediate the first and second doping levels.
Source: selected by the editor from original sources.

Invention: Avalanche diode in a bipolar integrated circuit