Avalance diode incorporated in a bipolar integrated circuit

Year	Description
1994	Invention patented by Gerard Le Roux and Jacques Le Menn on February 27th, 1994. Abstract: A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of the deep region, a second, P-type, deep diffused region contacting the periphery of the deep region, an N-type highly doped surface region coating the surface of the first deep diffused region and forming therewith an avalanche junction. At least another structure identical to the avalanche diode structure, without the N-type surface region, forms a resistor between its electrodes.
Source: selected by the editor from original sources.

Invention: Avalance diode incorporated in a bipolar integrated circuit