Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor

Year	Description
1990	Invention patented by Toshihiko Ibuka and Masahiro Noguchi on August 27th, 1990. Abstract: On the surface of n-type layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness: Thus, it is possible to form an ohmic electrode, which has low contact resistance and does not develop ball-up phenomenon.
Source: selected by the editor from original sources.

Invention: Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor