Al-Ni-Cr conductive layer for semiconductor devices

  

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Al-Ni-Cr conductive layer for semiconductor devices

Invention: Al-Ni-Cr conductive layer for semiconductor devices

Year    Description
1994Invention patented by Johnson O. Olowolafe, Hisao Kawasaki, and Chii-Chang Lee on December 4th, 1994. Abstract: An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.
Source: selected by the editor from original sources.

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