AC drain voltage charging source for PROM devices

Year	Description
1993	Invention patented by Chun Jiang on June 22th, 1993. Abstract: A method for programming a programmable read only memory (PROM) is useful for a PROM which has a source, a drain and a control gate. A DC signal is placed on the control gate. For example, the DC signal has a voltage of approximately 5 volts. An AC signal is placed on the drain. The AC signal, for example, oscillates between approximately 0 volts and 5 volts and has a frequency of at least 100 Megahertz. As a result, charges tunnel through a tunnel oxide region to an floating gate, thus programming the PROM.
Source: selected by the editor from original sources.

Invention: AC drain voltage charging source for PROM devices